科研之友
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摘要
A bidirectional low-noise amplifier (LNA) is presented in this letter. By using transistor bias control and low-loss coplanar waveguide structures with defected ground shield as both interconnect traces and distributed passives, the proposed two-port bidirectional amplifier achieves a measured performance close to the stand-alone LNA from 54 to 65 GHz. The design is fabricated in a 0.18-mu m SiGe BiCMOS process consuming a maximum 10.6-mA current from a 1.8-V supply voltage and occupies a 0.85-mm(2) core die area.
- 出版日期2017-8
- 单位电子科技大学
