摘要

In this paper, a novel CMOS power amplifier (PA) with high output power and power added efficiency is designed to operate in the avalanche region by increasing the supply voltage for the first time. With the X-parameter measurement based poly-harmonic distortion (PHD) behavioral model including the X-s and X-T terms, the simulation results can reveal accurate large signal characteristics of the whole PA at breakdown. The output power at 1-dB compression point of 302 dBm with 34.1% PAE at 2.4 GHz is obtained.