Epitaxial films of metals from the platinum group (Ir, Rh, Pt and Ru) on YSZ-buffered Si(111)

作者：Gsell S; Fischer M; Schreck M^*; Stritzker B

来源：Journal of Crystal Growth, 2009, 311(14): 3731-3736.

DOI：10.1016/j.jcrysgro.2009.04.034

• X-ray diffraction
• Heteroepitaxy
• Pulsed laser deposition
• Metals
• Oxides
• Yttrium compounds

In the present work we have grown twin-free single crystal metal films of iridium (Ir), rhodium (Rh), platinum (Pt) and ruthenium (Ru) on silicon (1 1 1) substrates via an yttria-stabilized zirconia (YSZ) buffer layer. A prerequisite for the realisation of heteroepitaxial metal films without additional texture components was the twin-free deposition of the YSZ films by pulsed laser deposition (PLD). For the metal films on top, a novel two-step growth process was applied with an extremely low deposition rate for the first 20 nm. For all metals, a drastic texture improvement by up to a factor of 9 could be observed compared to the oxide buffer layer. Minimum values were 0.18 degrees (Ir) and 0.12 degrees (Rh) for tilt and twist, respectively. For all four metals investigated, twin-free epitaxial films could be grown on YSZ/Si(1 1 1) whereas the twinning problem for platinum films was solved by decoupling the Pt-YSZ interface via an additional iridium interlayer. The grown metal/YSZ/Si(1 1 1) multilayer samples offer the possibility to integrate a variety of interesting nanostructures and functional materials on silicon. They are now available in 4 in wafer size.

• 出版日期2009-7-1