A Low Power Real-time On-Chip Power Sensor in 45-nm SOI

作者：Bhagavatula Srikar^*; Jung Byunghoo

来源：IEEE Transactions on Circuits and Systems I-Regular Papers, 2012, 59(7): 1577-1587.

DOI：10.1109/TCSI.2011.2177129

• Low power
• on-chip sensor
• power management
• power sensor
• temperature sensor

This paper introduces a real-time on-chip power and temperature sensor for active power management in scaled CMOS technologies. In a distinct departure from earlier power estimation techniques, this sensor measures the voltage drop due to a current load and converts it into pulse counts to get a power estimate in real time. Linear regression is used to estimate load current based on the measured output frequency at a given temperature. The same sensor is also used to estimate temperature in a mode where output time period decreases linearly with temperature. Measurement results show accuracy to within +/- 1.05 degrees C for temperature estimation in the range of 22 degrees C-100 degrees C and within +/- 10% of the actual power consumed (for loads <= 3.3 mA). Fabricated in 45-nm SOI technology, this power and temperature sensor occupies an area of 140 mu m x 140 mu m and has a power overhead of 120 mu W at 1.2 V supply.

• 出版日期2012-7