摘要

We demonstrate the use of n/p polymer/polymer heterojunction deposited by sequential solution processing to fabricate ambipolar field-effect transistors and complementary logic circuits. Electron and hole mobilities in the transistors were similar to 0.001-0.01 cm(2)/(V, s) in air without encapsulation. Complementary circuits integrating multiple ambipolar transistors into NOT, NAND and NOR gates were fabricated and shown to exhibit sharp signal switching with a high voltage gain.

  • 出版日期2010-11