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摘要
Room-temperature 1535 nm band photoluminescence in similar to 126 nm silica films (6 at% doping), produced by spin coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500-1050 degrees C). Emission is strongly enhanced for annealing near 850 degrees C, which is shown by modelling the temperature dependence as arising from thermally activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.
- 出版日期2011-8-10
