A model for the band gap energy of the N-rich GaN1-xAsx (0 < x <= 0.07) and the As-rich GaN1-xAsx (0.95 <= x <= 1)

作者：Zhao, Chuan-zhen^*; Li, Na-Na; Wei, Tong; Wang, Sha-Sha; Lu, Ke-Qing; Xie, Zi-Li

来源：Physica B: Condensed Matter , 2012, 407(24): 4823-4825.

DOI：10.1016/j.physb.2012.09.012

• GaNAs
• Band gap energy
• N-rich
• As-rich

In this paper, a model for the band gap energy of the N-rich GaNAs (0 < x <= 0.07) and the As-rich GaNAs (0.95 < x <= 1) is developed. For the N-rich GaNAs, The parameters describing the variation of the CBM and the VBM in the N-rich GaNAs are obtained by fitting the experimental data. For the As-rich GaNAs, the parameters in the model are obtained by fitting the experimental data of the band gap energy. It is found that the band gap evolution of the N-rich energy is different from that of the As-rich band gap energy. The model may be used to calculate the band gap energy of other dilute group III-N-V nitrides.

• 出版日期2012-12-15
• 单位天津工业大学; 中国民航大学; 南京大学