A Ku-band Dual-SPDT RF-MEMS Switch by Double-Side SOI Bulk Micromachining

作者：Yamane Daisuke^*; Sun Winston; Seita Harunobu; Kawasaki Shigeo; Fujita Hiroyuki; Toshiyoshi Hiroshi

来源：Journal of Microelectromechanical Systems, 2011, 20(5): 1211-1221.

DOI：10.1109/JMEMS.2011.2162490

• Bulk micromachining
• deep reactive-ion etching (DRIE)
• dual single-pole double-throw (dual-SPDT)
• gold electroplating
• ohmic contact
• radio-frequency microelectromechanical systems (RF-MEMS) switch
• X-Ku-band

This paper presents the design, fabrication method, and measurement results of a low-loss ohmic-contact radio-frequency microelectromechanical systems (MEMS) switch. A novel bidirectional electrostatic actuation mechanism has been developed for a dual single-pole double-throw switch that could be used for an X-Ku-band low-temperature cofired ceramic switched-line-type phase shifter. A high-aspect-ratio deep reactiveion etching process and a thick gold-plating process were used to develop low-insertion-loss air-suspended MEMS waveguides and low resistive ohmic contacts. A typical insertion loss of 0.56 dB, a return loss of 19.4 dB, and an isolation of 51.4 dB were obtained at a Ku-band frequency of 12 GHz. [2010-0364]

• 出版日期2011-10