摘要

In this study, a compact 100-W input power light-emitting diode array vapor chamber-based plate has been fabricated to investigate the thermal performance. To make a comparison, a typical commercial chip on board-type light-emitting diode array using a copper-based plate which has the same chip layout and the same power input was also investigated. The surface temperature distribution and total thermal resistance corresponding to these two high-power light-emitting diode modules were measured using a thermal infrared camera and a MicReD T3Ster. The experimental results show that the thermal performance of the compact light-emitting diode array using vapor chamber-based plate is much better than that using copper-based plate. The average temperatures of light-emitting diode copper- and vapor chamber-based plates are 100.5 degrees C and 41.5 degrees C at 100W power input, respectively. In addition, the maximal temperature difference of the 100-W light-emitting diode array vapor chamber-based plate is 2.2 degrees C far less than 31.7 degrees C of copper-based plate. Furthermore, the measurement results show that the vapor chamber can prominently lower the spreading resistance, diminish the hot-spot effect, and increase durability.