Magnetization reversal and spintronics of Ni/Graphene/Co induced by doped graphene

作者：Kim Dongyoo; Hashmi Arqum; Hwang Chanyong; Hong Jisang^*

来源：Applied Physics Letters, 2013, 102(11): 112403.

DOI：10.1063/1.4795764

We have investigated the magnetization reversal induced by carrier doped graphene (Be, B, N, O, or Cl doping) in Ni/Graphene/Co. In undoped case, the magnetic layers have an antiferromagnetic (AFM) coupling and this is still preserved from Be to O doping. We find magnetization reversal from AFM to ferromagnetic interaction induced by Cl doped graphene. In addition, the Ni and the Co layers show the opposite spin asymmetry near the Fermi level and this implies that each layer will generate completely different in-plane spin current in the same direction if an external electric field is applied.

• 出版日期2013-3-18