Development of all-solution-processed nanocrystal memory

作者：Huang Sheng Fu; Lin Hunag Di; Liu Bernard Haochih; Liu Fu Ken; Leu Ching Chich^*

来源：Journal of Alloys and Compounds, 2017, 698: 484-494.

DOI：10.1016/j.jallcom.2016.12.250

• Au-SiO2 core-shell NPs
• HfO2
• Nanocrystal memory
• 3-Aminopropyltrimethoxysilane (APTMS)

We developed an all-solution-processed nanocrystal memory containing high density (similar to 1 x 10(12) particles center dot cm(-2)) Au-SiO2 core-shell nanoparticles (NPs) within a uniform HfO2 matrix. High-quality HfO2 high-kappa oxide composed of ultra-thin (< 10 nm) tunnel and control oxide layers were prepared on a silicon substrate by the spin-on sol-gel process. The Au-SiO2 core-shell nanocomposite was also constructed by solution process using 3-aminopropyltrimethoxysilane (APTMS) as a functional mediator. This APTMS provides dual functions: (1) to serve as a binder for catching colloidal Au NPs onto the HfO2 substrate, and (2) to form a protective layer to cover up the Au NP core. The APTMS shell layer was well controlled through the self-assembly monolayer (SAM) layer-by-layer process with a self-limiting feature. It thermally decomposed into sub-nano thick SiO2 shell by post-deposition annealing, playing a key role in surmounting the deficiency of HfO2 for the use of both the tunnel oxide and the control oxide in the nanocrystal memory. This approach efficiently improved the application of a crystalline HfO2 nano-film for electronic device. By elaborately integrating the solution processes of the HfO2 oxide layer and the Au-SiO2 core-shell NPs, a high-performance nanocrystal memory was obtained. This study demonstrated the potential of chemical solution process for nanofabrication application.

• 出版日期2017-3-25