Scattering of electrons by polar optical phonons in AlGaN/GaN single heterostructures

作者：Mora Ramos ME; Velasco VR^*; Tutor J

来源：Surface Science, 2005, 592(1-3): 112-123.

DOI：10.1016/j.susc.2005.07.001

• III-V nitrides
• single heterostructures
• electron-phonon scattering

Electron-phonon scattering rates in the conduction band of III-V nitride-based systems with single interfaces are calculated using the dielectric continuum model for the interface and half-space polar optical phonon modes. The particular case of the AlxGa1-xN/GaN system is studied taking into account different values of the Al molar fraction, and a one-dimensional conduction band profile typical of a field effect transistor. The potential energy function in the GaN region is described in a way that includes many-body effects in the two-dimensional electron gas through a one-dimensional local-density Hartree potential. The contribution of the different oscillation modes to the total rates is discussed.

• 出版日期2005-11-1