A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization

作者:Karumuri Naveen; Dutta Gourab; DasGupta Nandita; DasGupta Amitava
来源:IEEE Transactions on Electron Devices, 2016, 63(11): 4226-4232.
DOI:10.1109/TED.2016.2605130