Application of AFM technique for creation of patterns in nanoscale

作者:Ramiaczek Krasowska Maria*; Szyszka Adam; Stafiniak Andrzej; Paszkiewicz Regina; Paszkiewicz Bogdan; Tlaczala Marek
来源:Optica Applicata, 2011, 41(2): 307-314.

摘要

The lithography is a main technology process which determines the properties of semiconductor devices. The resolution of optical lithography is insufficient for creation of submicrometer patterns, like, e.g., gate electrode in HEMT transistors. Thus, a novel technique that uses AFM technique and common photolithography was proposed. In the paper, the results of nanoscratching lithography were presented and discussed. Also the transmission and root mean square of thin metal films measurements were summarized.

  • 出版日期2011