An 83% Enhancement in the External Quantum Efficiency of Ultraviolet Flip-Chip Light-Emitting Diodes With the Incorporation of a Self-Textured Oxide Mask

作者：Shen Kun Ching^*; Lin Wen Yu; Wuu Dong Sing; Huang Shih Yung; Wen Kuo Sheng; Pai Shih Feng; Wu Liang Wen; Horng Ray Hua

来源：IEEE Electron Device Letters, 2013, 34(2): 274-276.

DOI：10.1109/LED.2012.2228462

• External quantum efficiency (EQE)
• GaN
• light-emitting diode (LED)
• ultraviolet (UV) generation

We demonstrate here a 380-nm ultraviolet InGaN flip-chip (FC) light-emitting diode (LED) with self-textured oxide mask (STOM-FCLED) structures fabricated in a large-area (1125 x 1125 mu m(2)) FC configuration. An 83% enhancement in the external quantum efficiency was achieved for the STOM-FCLEDs when compared with FCLEDs without the STOM structure operating at an injection current of 350 mA. For STOM-FCLEDs operating at an injection current of 1000 mA, a light output of approximately 400 mW was obtained. These results could be attributed to the introduction of the STOM structure, which not only reduces the density of threading dislocation but also intensifies the LED light extraction.

• 出版日期2013-2