Ambipolar Transport in Bilayer Organic Field-Effect Transistor Based on Poly(3-hexylthiophene) and Fullerene Derivatives

作者：Morita Takeomi^*; Singh Vipul; Oku Shinya; Nagamatsu Shuichi; Takashima Wataru; Hayase Shuzi; Kaneto Keiichi

来源：Japanese Journal of Applied Physics, 2010, 49(4): 041601.

DOI：10.1143/JJAP.49.041601

Ambipolar characteristics in an organic field-effect transistor (FET) with a bilayer structure consisting of poly(3-hexylthiophene) (P3HT) and a fullerene derivative (PCBM) are reported. P3HT was deposited by a floating film transfer method (FTM) with toluene solution on spin-coated PCBM. The FTM-deposited film was found to show relatively high hole mobility even when cast using toluene solution. Even after coating P3HT on PCBM by FTM, a relatively high n-type transport was obtained. This indicates that FTM employed in this study is a mild way to coat an organic thin film on an organic semiconductor layer in terms of minimizing the effect of carrier transport in the underlayer. The transport characteristics have been discussed in comparison with those of ambipolar FETs prepared by other methods previously reported.

• 出版日期2010