A Method to Fabricate a Template With a Long Range Ordered Dense Array of True Nanometer Scale Pits

作者：Lee Jae Young^*; Sun Ke; Li Biyun; Wei Xinyu; Russell Tom; Xie Ya Hong

来源：IEEE Transactions on Nanotechnology, 2011, 10(2): 256-259.

DOI：10.1109/TNANO.2009.2038376

• Anisotropic wet etching
• chemical mechanical polishing (CMP)
• nanopattern transfer
• quantum confinement
• TEM
• X-ray photoelectron spectroscopy (XPS)

We present a method to form a patterned template having a dense array of subnanometer scale pits that is useful for numerous applications that require significant size reduction. The polystyrene-polymethylmethacrylate diblock copolymer nanopatterned sample has been used in order to form a hexagonal symmetry as a starting scaffold. The ordered copolymer pattern is then transferred to the oxide layer to form a hard mask for subsequent anisotropic silicon wet-etching process. With a controlled wet etching, we obtained inverted pyramidal pits on a silicon substrate of which the tips can be a few or even a single nanometer in its lateral dimension. The most common phase change material Ge(2)Sb(2)Te(5) (GST225) was deposited on this substrate and isolated within the pits using chemical mechanical polishing approach, followed by X-ray photoelectron spectroscopy elemental analysis.

• 出版日期2011-3