Modulation-doped beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 field-effect transistor

作者：Krishnamoorthy, Sriram^*; Xia, Zhanbo^*; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth^*

来源：Applied Physics Letters, 2017, 111(2): 023502.

DOI：10.1063/1.4993569

• BETA-GA2O3 SINGLE-CRYSTALS
• GROWTH
• EDGE

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 material system could enable heterojunction devices for high performance electronics. Published by AIP Publishing.

• 出版日期2017-7-10