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摘要
A comparative study on the hot-carrier degradation between inversion mode and junctionless n-channel multiple gate MOSFET has been performed experimentally. The device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. However, this trend is reversed at high stress gate voltage. The highest degradation rate is found to occur at V-G = V-FB in JL transistors and at classical stress bias conditions (V-G = V-D/2) in IM transistor. 3-Dimensional device simulation is used to explain the observed results.
- 出版日期2013-1
