Dislocation reduction in GaN grown on nano-patterned templates

作者：Yang W C; Chen K Y; Cheng Kai Yuan; Wang Y L; Hsieh K C; Cheng K Y

来源：Journal of Crystal Growth, 2015, 425: 141-144.

DOI：10.1016/j.jcrysgro.2015.02.092

• Threading dislocations
• Nanoimprint lithography
• Molecular beans epitaxy

A nano-holes patterned GaN-on-patterned sapphire substrate template has been developed to reduce the threading dislocation (TD) density in homoepitaxy GaN layer grown by plasma-assisted molecular beam epitaxy. The grown layers characterized by high resolution x-ray diffraction, photoluminescence, and cross-section transmission electron microscopy confirm that the TD density of GaN epilayer has been successfully reduced an order of magnitude to similar to 10(7) cm(-2) by optimizing the depth and coverage area percentage of patterned nano-holes.

• 出版日期2015-9-1