科研之友
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摘要
Conventional method used for measurement of linearly extrapolated threshold voltage from the slope of root I-SD vs. V-GS characteristics in organic thin film transistors (OTFTs) suffers from the influence of gate dependence of field mobility and its use for comparing different devices can result in anomalous trends. In the present work, an improved method is described, which eliminates the effects of mobility and yields a unique value of threshold voltage. Experimental results obtained with pentacene OTFTs with two different dielectric materials are presented, which show that actual threshold voltage can be very different than the values estimated using the conventional technique.
- 出版日期2013-6-24
