Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures

作者：Srnanek R^*; Irmer G; Donoval D; Osvald J; Mc Phail D; Christoffi A; Sciana B; Radziewicz D; Tlaczala M

来源：Microelectronics Journal, 2008, 39(12): 1439-1443.

DOI：10.1016/j.mejo.2008.06.039

• Zn delta doping
• Concentration profile
• Gallium arsenide
• Bevel
• Raman spectroscopy

Micro-Raman spectroscopy was used to characterize beveled Zn delta (delta)-doped GaAs structures. By adapting procedures previously developed for the study of Si delta-doped GaAs structures, Zn-doping profiles were obtained for a set of structures prepared with different doping levels. Values of the doping spike concentration and the full-width at half-maximum of the doping profile were compared with the values obtained by the electrochemical capacitance-voltage (EC-V) and secondary ion mass spectroscopy (SIMS) methods. The good correspondence between this Raman procedure and other well-known methods proves the validity of the technique for determining doping profiles in Zn delta-doped GaAs structures.

• 出版日期2008-12
• 单位中国科学院电工研究所