A Generic Model of Memristors With Parasitic Components

作者：Sah Maheshwar Pd^*; Yang Changju; Kim Hyongsuk; Muthuswamy Bharathwaj; Jevtic Jovan; Chua Leon

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62(3): 891-898.

DOI：10.1109/TCSI.2014.2373674

• Generic model
• memristive devices
• memristor
• parasitic components
• pinched hysteresis loop

In this paper, a generic model of memristive systems, which can emulate the behavior of real memristive devices is proposed. Non-ideal pinched hysteresis loops are sometimes observed in real memristive devices. For example, the hysteresis loops may deviate from the origin over a broad range of amplitude and frequency of the input signal. This deviation from the ideal case is often caused by parasitic circuit elements exhibited by real memristive devices. In this paper, we propose a generic memristive circuit model by adding four parasitic circuit elements, namely, a small capacitance, a small inductance, a small DC current source, and a small DC voltage source, to the memristive device. The adequacy of this model is verified experimentally and numerically with two thermistors (NTC and PTC) memristors.

• 出版日期2015-3