Up to 3 mu m light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

作者：Sprengel Stephan^*; Grasse Christian; Vizbaras Kristijonas; Gruendl Tobias; Amann Markus Christian

来源：Applied Physics Letters, 2011, 99(22): 221109.

DOI：10.1063/1.3665256

We present 3 mu m photoluminescence at room temperature, which is achieved with GaInAs/GaAsSb type-II quantum wells on InP substrate. This long-wavelength emission became feasible by using highly compressive strained Ga(0.25)In(0.75)As and GaAs(0.4)Sb(0.6) layers. Furthermore, a comparison between standard superlattice and so called "W" shaped quantum wells revealed

• 出版日期2011-11-28