A Comparison of Power Factor in N and P-Type SiGe Nanowires for Thermoelectric Applications

作者：Noroozi Mohammad^*; Hamawandi Bejan; Jayakumar Ganesh; Zahmatkesh Katayoun; Radamson Henry H; Toprak Muhammet S^*

来源：Journal of Nanoscience and Nanotechnology, 2017, 17(3): 1622-1626.

DOI：10.1166/jnn.2017.13728

• Thermoelectric
• SiGe Nanowires
• Power Factor
• Sidewall Transfer Lithography
• Condensation

This work presents the thermoelectric properties of n- and p-type doped SiGe nanowires and shows the potential to generate electricity from heat difference over nanowires. The Si0.74Ge0.26 layers were grown by reduced pressure chemical vapor deposition technique on silicon on insulator and were condensed to the final Si0.53Ge0.47 layer with thickness of 52 nm. The nanowires were formed by using sidewall transfer lithography (STL) technique at a targeted width of 60 nm. A high volume of NWs is produced per wafer in a time efficient manner and with high quality using this technique. The results demonstrate high Seebeck coefficient in both n- and p-types SiGe nanowires. N-type SiGe nanowires show significantly higher Seebeck coefficient and power factor compared to p-type SiGe nanowires near room temperature. These results are promising and the devised STL technique may pave the way to apply a Si compatible process for manufacturing SiGe-based TE modules for industrial applications.

• 出版日期2017-3