A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

作者：Cao Quan Jun^*; Zhang Yi Men; Zhang Yu Ming; Lu Hong Liana; Wang Yue Hu; Chang Yuan Cheng; Tang Xiao Yan

来源：Chinese Physics, 2007, 16(4): 1097-1100.

• 4H-SiC MESFET
• drain current model
• CAD
• large signal

This paper reports that a 4H-SiCMESFET ( Metal Semiconductor Field Effect Transistor) large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE ( power added efficiency), output power and gain.

• 出版日期2007-4
• 单位西安电子科技大学