Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits

作者：Ou Chun Wei; Ho Zhong Yo; Chuang You Che; Cheng Shiau Shin; Wu Meng Chyi; Ho Kuo Chuan; Chu Chih Wei^*

来源：Applied Physics Letters, 2008, 92(12): 122113.

DOI：10.1063/1.2898217

In this article, we report the fabrication of SnO(2) thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p-type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p-channel SnO(2) TFTs. The on/ off ratio and the field-effect mobility were similar to 10(3) and 0.011 cm(2)/V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p-channel oxide TFTs would open up new challenges in the area of transparent electronics.

• 出版日期2008-3-24
• 单位中国科学院; 清华大学