Near bulk-limited R(0)A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation

作者：Hood Andrew; Delaunay Pierre Yves; Hoffman Darin; Nguyen Binh Minh; Wei Yajun; Razeghi Manijeh^*; Nathan Vaidya

来源：Applied Physics Letters, 2007, 90(23): 233513.

DOI：10.1063/1.2747172

Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400x400 to 25x25 mu m(2), with a cutoff wavelength of similar to 11 mu m, exhibited near bulk-limited R(0)A values of similar to 12 Omega cm(2), surface resistivities in excess of 10(4) Omega cm, and very uniform current-voltage behavior at 77 K.

• 出版日期2007-6-4
• 单位西北大学