A Study of Ta-Si-N/Ti Bilayer Diffusion Barrier for Copper/Silicon Contact Systems

作者：Ding, Minghui^*; Zheng, Hang; Wang, Li; Zhang, Hongsen

来源：Materials and Manufacturing Processes, 2016, 31(8): 1009-1013.

DOI：10.1080/10426914.2015.1004711

• Barrier
• Interconnection
• Copper
• Thermal stability
• Resistance
• Diffusion
• Bilayer
• Sputtering

Ta-Si-N (10nm)/Ti (20nm) bilayer film has been designed with the purpose of using as diffusion barrier in copper interconnection. Ta-Si-N/Ti bilayer diffusion barriers were deposited on the substrate of n-type (100) silicon wafer using radio-frequency (RF) magnetron sputtering, followed by in situ deposition of copper. To investigate the thermal stability of the Ta-Si-N/Ti diffusion barriers, annealing was subsequently conducted in N-2 gas for 60min and annealing temperatures were chosen at 600 degrees C, 650 degrees C, 700 degrees C, 750 degrees C, and 800 degrees C. X-ray diffraction (XRD) revealed that Ta-Si-N layer grown on the Ti layer exhibited an amorphous phase. The results indicated that Ta-Si-N/Ti film can prevent copper diffusion at 750 degrees C. After annealing at 750 degrees C, the production of Ti-Si layer can effectively decrease contact resistance between barrier and silicon.

• 出版日期2016-6-10
• 单位哈尔滨工程大学