A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs

作者：De Rose Raffaele; Lanuzza Marco; d%apos; Aquino Massimiliano; Carangelo Greta; Finocchio Giovanni; Crupi Felice; Carpentieri Mario

来源：IEEE Transactions on Electron Devices, 2017, 64(10): 4346-4353.

DOI：10.1109/TED.2017.2734967

• Compact model
• magnetic tunnel junction (MTJ)
• spin-transfer torque (STT)
• STT-magnetic random access memory (MRAM)
• technology scaling

The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)magnetic tunnel junctions (MTJs) implemented in Verilog-A to assure easy integration with electrical circuit simulators. It takes into account the effects of voltage-dependent perpendicularmagnetic anisotropy, temperature-dependent parameters, thermal heating/cooling, MTJ process variations, and the spin-torque asymmetry of the Slonczewski spin-polarization function in the switching process. This translates into a comprehensivemodeling that was adopted to investigate thewriting performance under voltage scaling of a 256 x 256 STT-magnetic random access memory array implemented at three different technology nodes. Obtained results show that scaling from 30-to 20-nm node allows a write energy saving of about 43%, while the supply voltage that assures the minimum-energy write operation increases.

• 出版日期2017-10