Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates

作者：Yu Xiao^*; Zhang Rui; Kang Jian; Maeda Tatsuro; Itatani Taro; Osada Takenori; Hata Masahiko; Takenaka Mitsuru; Takagi Shinichi

来源：ECS Solid State Letters, 2015, 4(2): P15-P18.

DOI：10.1149/2.0031502ssl

We demonstrate thin body GeOI Pseudo-MOSFETs fabricated by a novel GeOI fabrication process based on epitaxial Ge films grown on III-V compound semiconductor wafers and wafer bonding. Ge surfaces before bonding are treated by plasma post oxidation to form GeOx, which can provide better interfacial quality between Ge and buried oxides. Normal operations of n- and p-MOSFETs are confirmed for GeOI with average thickness of 60 to 20 nm. The peak effective hole and electron mobility of 122 and 235 cm(2)/Vs, respectively, have been obtained for 20-nm-thick-GeOI n- and p-MOSFETs. The GeOI thickness dependence of mobility is also examined. (C) The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.

• 出版日期2015