A high-performance wideband CMOS low-noise amplifier using inductive series and parallel peaking techniques

作者：Lee Jen How^*; Chen Chi Chen; Lin Yo Sheng

来源：Microwave and Optical Technology Letters, 2008, 50(5): 1240-1244.

DOI：10.1002/mop.23338

• wideband
• CMOS
• LNA
• inductive series-peaking
• inductive
• parallel-peaking

A 1-11 GHz wideband low-noise amplifier (LNA) with good phase linearity properties (group-delay variation is only +/- 35.56 ps across the 3.1-10.6 GHz band of interest) using standard 0. 18 mu m CMOS technology is reported. To enhance the bandwidth for achieving both high and flat gain and small group-delay variation, the inductive shunt-peaking technique is adopted in the load of the input stage, while the inductive series-peaking technique is adopted in the input terminal of the output stage. The wideband LNA dissipates 29.46 m W power and achieves input return loss (S-11) of - 9.32 to - 9.98 dB, flat forward gain (S-21) of 11 +/- I dB, reverse isolation (S-12) of -46 to -60 dB, and noise figure of 4.15-4.85 dB over the 3.1-10.6 GHz band of interest. Good 1-dB compression point (P-1 dB) of -14 dBm and input third-order inter-modulation point (IIP3) of -3 dBm are achieved at 6.4 GHz. The chip area is only 675 mu m X 632 mu m excluding the test pads.

• 出版日期2008-5