Diamond MOSFET An innovative layout to improve performance of ICS

作者：Gimenez Salvador Pinillos^*

来源：Solid-State Electronics, 2010, 54(12): 1690-1696.

DOI：10.1016/j.sse.2010.08.011

• New planar MOSFET and SOI MOSFET
• Drain/silicon film (channel region)/source engineering concept
• Corner effect concept
• 3D numerical simulations
• Modeling
• Electrical characterization

A new planar MOSFET structure is proposed through a simple layout change which modifies the gate geometric shape from rectangular to hexagonal in order to use the corner effect concept to enhance the resultant longitudinal (parallel) electric field drift velocity of mobile carriers in the channel drain current transconductance Early voltage and on-resistance in comparison to the equivalent conventional parameters This paper is conceptual and performs a comparative analyzes between conventional and Diamond Partially-Depleted SOI nMOSFETs by 3D numerical simulations to understand the advantages and disadvantages of this innovative device compared to the conventional counterpart keeping the same gate area geometric factor and bias conditions A simple analytical model for the drain current was pro posed and tested for the Diamond transistor Since we found better results of the Diamond SOI nMOSFETs we believe that this innovative layout can be a new alternative for analog and digital integrated circuit applications for whatever a

• 出版日期2010-12