A Self-Assembled Double-Island Buffer Structure for Improving GaN-Based Materials Grown on Si Substrates

作者：Liu Hsueh Hsing^*; Cheng Lung Chieh; Yeh Nien Tze; Lee Geng Yen; Liao Chen Zi; Chyi Jen Inn

来源：ECS Journal of Solid State Science and Technology, 2014, 3(12): R229-R233.

DOI：10.1149/2.0051412jss

This paper reports a new method to reduce threading dislocation density in GaN epilayers grown on (111) Si substrates by metalorganic chemical vapor deposition. This method utilizes an in-situ SiNx mask to produce a self-assembled double-island structure, which effectively reduces threading dislocation density from 9.6 x 10(9) cm(-2) to 2.6 x 10(9) cm(-2) without using any lithographic and regrowth processes. InGaN light-emitting diodes fabricated on the double-island buffer layer exhibit nearly 20% improvement on the optical output power as well as less energy localization effect, compared to those without the double-island buffer layer. The mechanisms of double-island formation as well as dislocation reduction are proposed based on transmission electron microscopy investigations. (C) The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: [e-mail].

• 出版日期2014
• 单位中央民族大学