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摘要
It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Delta vertical bar V-ON - V-OFF vertical bar), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9yl) aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4-, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>10(7)) and low switch-on/off voltages (-0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Delta vertical bar V-ON - V-OFF vertical bar value are found to be 3 x 10(3) and 5.47 (Delta vertical bar+2.53-2.94 vertical bar), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.
- 出版日期2019-2-28
- 单位中国科学院长春应用化学研究所; 华东理工大学
