Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

作者：Marin E G^*; Ruiz F G; Tienda Luna I M; Godoy A; Sanchez Moreno P; Gamiz F

来源：Journal of Applied Physics, 2012, 112(8): 084512.

DOI：10.1063/1.4759275

In this work, an analytical model is proposed to calculate the potential and the inversion charge of III-V cylindrical Surrounding-Gate metal-oxide-semiconductor field-effect transistors (MOSFETs). The model provides expressions for the calculation of the subband energies and their corresponding wavefunctions, taking into account their penetration into the gate insulator and the effective mass discontinuity in the semiconductor-insulator interface for this kind of devices. The model considers Fermi-Dirac statistics and the two-dimensional quantum confinement of the carriers. We demonstrate that our analytical solution fits very well the numerical solution in all operating regimes and for different device sizes and materials.

• 出版日期2012-10-15