摘要

In-plane uniaxial magnetic anisotropy (UMA) has been carefully studied for the same amorphous Co56Fe24B20 (CoFeB) film deposited on different orientational GaAs substrates. It was noted that a strong uniaxial anisotropy field (H-k) of similar to 270 Oe could be achieved with CoFeB film grown on GaAs(001) substrate, which is much larger than the largest value (150 Oe) reported before. In contrast, H-k was <20 Oe when the same CoFeB film was deposited on (110) or (111) GaAs substrate. The angular dependence of H-k also behaved quite differently in these CoFeB films. Based on the surface morphology of the CoFeB/GaAs films, the possible mechanisms responsible for the different behavior of UMA were briefly discussed in terms of bond-orientational anisotropy model and random anisotropy model.