Application of the Meyer-Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors

作者：Takechi Kazushige^*; Nakata Mitsuru; Eguchi Toshimasa; Yamaguchi Hirotaka; Kaneko Setsuo

来源：Japanese Journal of Applied Physics, 2009, 48(7): 078001.

DOI：10.1143/JJAP.48.078001

We show that an exponential tail-state distribution model combined with the Meyer-Neldel rule can be used to describe the subthreshold characteristics of amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs). Incorporating temperature-dependent experimental data into the model, we estimate the density of tail states at the conduction-band mobility edge for a-IGZO to be approximately 1.3 x 10(19) cm(-3) eV(-1), which is one order of magnitude lower than that estimated for hydrogenated amorphous Si (a-Si:H).

• 出版日期2009-7