Embedded ErAs nanorods on GaAs(n11) substrates by molecular beam epitaxy

作者：Buehl Trevor E^*; Palmstrom Christopher J; Gossard Arthur C

来源：Journal of Vacuum Science and Technology B, 2011, 29(3): 03C108.

DOI：10.1116/1.3549888

This article investigates the codeposited growth of ErAs and GaAs at concentrations of 6% and 10% of Er on (111)A, (211)A, (311)A, and (511)A GaAs. On (111)A, (211)A, and (311)A GaAs, ErAs nanorods were observed. Those observed on the (111)A GaAs surface were found to align themselves normal to the substrate, along the (111) direction, whereas those on the (211)A and (311)A GaAs substrates were found to align along the (211) direction, as was previously observed on (411)A GaAs. All observed nanorods had a diameter of approximately 2 nm and a period of 5-6 nm. Codeposited growth on (511)A GaAs produced ErAs nanoparticles that were elliptical in shape and aligned along the (311) planes with their major axis pointing along the (311) direction. Growth of these nanorods and nanoparticles most likely occurs by a surface phase-separation mechanism.

• 出版日期2011-5