An X-Band Half-Watt CMOS Power Amplifier Using Interweaved Parallel Combining Transformer

作者：Tsai Jeng Han^*; Wang Jen Wei

来源：IEEE Microwave and Wireless Components Letters, 2017, 27(5): 491-493.

DOI：10.1109/LMWC.2017.2690878

• CMOS
• power amplifiers (PAs)
• radio frequency integrated circuits
• X-band

An X-band half-watt fully integrated power amplifier (PA) using standard 0.18-mu m 1P6M CMOS technology is presented in this letter. Utilizing an interweaved three-primary parallel combining transformer, the CMOS PA delivers 27.1 dBm of measured saturation output power (P-sat) with 22.7% of power-added efficiency at 9 GHz from a 3.3-V power supply. The measured output 1-dB gain compression point (OP1 dB) is 24.2 dBm and the gain performance is 11.2 dB at 9 GHz. The chip size is 1.045 x 0.84 mm(2). To the best of our knowledge, the PA is the first half-watt CMOS PA with excellent power density at the X-band.

• 出版日期2017-5