Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

作者：Kao Kuo Hsing^*; Verhulst Anne S; Rooyackers Rita; Douhard Bastien; Delmotte Joris; Bender Hugo; Richard Olivier; Vandervorst Wilfried; Simoen Eddy; Hikavyy Andriy; Loo Roger; Arstila Kai; Collaert Nadine; Thean Aaron; Heyns Marc M; De Meyer Kristin

来源：Journal of Applied Physics, 2014, 116(21): 214506.

DOI：10.1063/1.4903288

Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined with a 6-band k.p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.

• 出版日期2014-12-7