High mobility thin film transistors based on zinc nitride deposited at room temperature

作者：Dominguez Miguel A; Luis Pau Jose; Gomez Castano Mayte; Luna Lopez Jose A; Rosales Pedro

来源：Thin Solid Films, 2016, 619: 261-264.

DOI：10.1016/j.tsf.2016.10.053

• Zinc nitride
• Thin-film transistors
• Room-temperature deposition

In this work, the characterization of high mobility thin-film transistors based on zinc nitride films deposited at room temperature by magnetron radio-frequency sputtering is presented. The values extracted of field-effect mobility were >2 cm(2)/Vs for long channel devices. For short channel devices, a reduction of the mobility values is found and, as a result of the analysis of the width-normalized resistance for different channel lengths and gate voltages, the reduction is attributed to the effects of a high contact resistance. The impact of the gate dielectric thickness on electrical characteristics is also presented.

• 出版日期2016-11-30