摘要
P-type ZnO thin films were synthesized by ultrasonic spray pyrolysis. Effect of solution concentration ratio on the electrical and structural characteristics of thin films was investigated. The result of X-ray diffraction reveals that co-doping ZnO thin films have similar crystallization characteristic like that of un-doping. The results of Hall measurement indicate that conductive type of as-grown ZnO thin films changed from n type to p type and then n type again with the increasing of ratio of N:Al. Using this method p type ZnO thin films was deposited on glass substrate, of which hole concentration is 4.6 × 1018 cm-3, Hall mobility and resistivity are 0.4 cm2·V-1·s-1, 3.3Ω·cm, respectively.
- 出版日期2006
- 单位南开大学