Graphene nanomesh transistor with high on/off ratio and good saturation behavior

作者：Berrada Salim^*; Viet Hung Nguyen; Querlioz Damien; St Martin Jerome; Alarcon Alfonso; Chassat Christophe; Bournel Arnaud; Dollfus Philippe

来源：Applied Physics Letters, 2013, 103(18): 183509.

DOI：10.1063/1.4828496

We investigate the device operation and performance of transistors based on a graphene nanomesh lattice. By means of numerical simulation, we show that this device architecture allows suppressing the chiral tunneling, which reduces drastically the off current and enhances the on/off ratio compared to the pristine graphene counterpart. Additionally, a good saturation of current can be reached in the thermionic regime of transport. Though reduced compared to the case of pristine transistors, the transconductance and the cutoff frequency are still high. Above all, the nanomesh transistors outperform their pristine graphene counterpart in terms of voltage gain and maximum oscillation frequency.

• 出版日期2013-10-28