A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material

作者：Carballo V M Blanco^*; Fransen M; van der Graaf H; Lu J; Schmitz J

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2011, 629(1): 118-122.

DOI：10.1016/j.nima.2010.10.143

• MPGD
• GEMGrid
• Microbulk
• Micromegas
• Silicon oxide
• Timepix
• CMOS post-processing
• Microsystems
• Above IC
• Radiation detectors

We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with nonpolymeric materials. The device structure is similar to a Microbulk Micromegas design, consisting of a punctured metal grid supported by a continuous perforated insulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC(4)H(10) (80/20) and Ar/iC(4)H(10) (80/20) gas mixtures under (55)Fe irradiation. Gas gain of 20,000 and energy resolution below 13% FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-mu m technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC(4)H(10) (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.

• 出版日期2011-2-11