Unipolar resistance switching behavior of Pr4O7-Pr2CuO4-δ thin films

作者：Yin, J. T.; Liu, X. S.; Wei, L.; Yin, Y. F.; Zhang, W. F.^*

来源：Thin Solid Films, 2016, 619: 174-178.

DOI：10.1016/j.tsf.2016.10.072

• Unipolar resistance switching
• Pt/Pr4O7-PCO/Pt
• Thin films
• Oxygen vacancies

Pr4O7-Pr2CuO4-delta (PCO) thin filmswere grown on Pt (Pt/Ti/SiO2/Si) substrates by pulsed laser deposition and their resistive switching behavior was investigated. The resistance ratio RH/L (R-high/R-low) could be larger than 10(4), which can be maintained up to 50 cycles and 10(4) s without detectable degradation. The results show that the Pt/Pr4O7-PCO/Pt device possesses excellent endurance and retention properties. The physical mechanism of resistive switching in Pr4O7-PCO film could be ascribed to the forming and rupturing of conductive filaments via migration of oxygen vacancies.

• 出版日期2016-11-30
• 单位河南大学