科研之友
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摘要
Although SiO2 nano-patterns with a high aspect ratio could already be fabricated by edge lithography, the SiO2 nano-patterns were often not suitable as molds for nano-imprint lithography because they were too fragile. To improve the SiO2 nano-pattern strength, a small Si step was fabricated around the bottom of the SiO2 nano-patterns. Such strength enhanced SiO2 nano-patterns were successfully replicated into both polymethylmethacrylate and polystyrene films on a Si substrate by thermal nano-imprint lithography. Resist patterns 25 nm in width and 430 nm in depth were obtained. The residual layer was removed in an N-2/O-2 plasma. Si trenches were fabricated using the imprinted polystyrene nano-patterns, and Si nano-trenches 35 nm in width and 285 nm in depth were thereby successfully obtained.
- 出版日期2012-10
