摘要
Ferroelectric aging behavior was investigated in Na0.5Bi0.5(Ti0.99Zr0.01)O-3 thin film on FTO/glass substrate by the dielectric constant (dissipation factor)-electric field (epsilon(r)-E and tan delta-E) curves. The aged sample can be gained by keeping the fresh film for two months at room temperature. Compared with the typical single butterfly epsilon(r) (tan delta)-E of the fresh sample, an abnormal loop has been exhibited in the aged-one. Furthermore, with the increase of the measuring electric field or decrease of applied frequency, the aging phenomenon becomes weak and even disappeared. These present results are analyzed based on defect chemistry by the symmetry-conforming principle of defect dipoles.
- 出版日期2016-2-1
- 单位济南大学