DIODE p-i-n-STRUCTURES BASED ON NEUTRON DOPED Si1-xGex-ALLOYS

作者：Chekanov V^*; Yevseyev V; Kuryatkov V; Prokofyeva T

来源：International Journal of Modern Physics B, 2011, 25(11): 1459-1466.

DOI：10.1142/S0217979211058869

• Si1-xGex-alloy
• neutron transmutation doping
• p-i-n structures
• DLTS
• V I and C-V-characteristics
• p-i-n photodiodes

Photoelectric of neutron transmutation doped (NTD) Si1-xGex solid solutions (alloy) with variable composition are presented. It is shown that the application of NTD method to Si1-xGex, solid solutions with gradient composition (x = 0-2 at.%) along an ingot allows to receive p-i-n structures with typical diode characteristics, We studied electrical and photoelectrical properties of that structure. Deep level transient spectroscopy of p-i-n diode has revealed the energy levels in the forbidden zone of Si1-xGex, connected with transmutation Se impurity. It is established that p-i-n-structures possess high spectral sensitivity with a maximum at hv = 1.2 1.5 eV- (300 K). Possible application of Si1-xGex-alloys in development of uncooled photodiodes with large effective area was considered.

• 出版日期2011-4-30