Arrayed narrow linewidth erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss silicon-nitride platform

作者：Belt Michael^*; Huffman Taran; Davenport Michael L; Li Wenzao; Barton Jonathon S; Blumenthal Daniel J

来源：Optics Letters, 2013, 38(22): 4825-4828.

DOI：10.1364/OL.38.004825

We demonstrate an array of erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss Si3N4 platform. Sidewall gratings providing the lasing feedback are defined in the silicon-nitride layer using 248 nm stepper lithography, while the gain is provided by a reactive co-sputtered erbium-doped aluminum-oxide layer. We observe lasing output over a 12 nm wavelength range (1531-1543 nm) from the array of five separate lasers. Output powers of 8 mu W and lasing linewidths of 501 kHz are obtained. Single-mode operation is confirmed, with side-mode suppression ratios over 35 dB for all designs.

• 出版日期2013-11-15